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| Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2089 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS Small screen color TV horizontal output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE MAXIMUM RATINGS AT Ta=25ae SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25ae PC Collector power dissipation Tc=25ae Tj Tstg Junction temperature Storage temperature 40 150 -55~150 ae ae CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 3.5 1 3.5 W V A A UNIT V JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Emitter-base saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance Diode forward voltage Fall time CONDITIONS IE=200mA , IC=0 IC=2.2A; IB=0.7A IC=2.2A; IB=0.7A VCB=500V; IE=0 IC=0.5A ; VCE=5V IC=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz IF=2.2A ICP=2.2A ;IB1(end)=0.7A 9 3 95 1.2 0.2 MIN 5 0.3 2SD2089 SYMBOL VEBO VCEsat VBEsat ICBO hFE fT COB VF tf TYP. MAX UNIT V 1.0 1.0 10 18 |I V V A 0.85 MHz pF 1.5 0.5 |I V s JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2089 Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) JMnic |
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